Direct Growth of Large-Area Graphene by Cross-Linked Parylene Graphitization Toward Photodetection - Details

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Large　area　uniform　graphene　was　directly　grown　on　insulating　substrate　by　cross-linked　Parylene　graphitization.　The　as-grown　graphene　was　used　for　the　fabrication　of　graphene-Si　Schottky　junction　photodetector　with　a　responsivity　of　275.9　mA/W.　c　2019　The　Author(s)　©　2019　OSA.

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[ 1 ] [Dong, Y.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 2 ] [Cheng, C.]Chinese Academy of Sciences, State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Beijing, 100083, China
[ 3 ] [Xu, C.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 4 ] [Mao, X.]Chinese Academy of Sciences, State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Beijing, 100083, China
[ 5 ] [Xie, Y.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 6 ] [Pan, G.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 7 ] [Wang, Q.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 8 ] [Sun, J.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 9 ] [Sun, J.]College of Physics and Information Engineering, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350116, China

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2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Year： 2019

Language： English

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