The　ZnSb-based　thermoelectric　material　is　a　kind　of　material　with　good　thermoelectric　properties　in　middle　temperature　region.　In　order　to　further　improve　its　performance,　ZnSb　thermoelectric　thin　films　were　fabricated　by　magnetron　sputtering　(RF+DC)　with　the　Zn-Sb　binary　composite　target.　The　doping　amount　of　the　Ag　element　was　controlled　by　changing　the　sputtering　power.　The　annealing　temperature　was　300℃　and　the　annealing　time　was　1h;　the　homogenization　of　the　dopant　elements　and　the　crystallization　of　the　samples　were　carried　out　by　vacuum　annealing.　The　properties　of　the　films　were　tested　by　scanning　electron　microscopy　(SEM),　X-ray　diffractometry　(XRD),　Hall　effect　tester　and　thin　film　Seebeck　coefficient　measurement　system.　The　effects　of　doping　on　the　structure　and　thermoelectric　properties　of　ZnSb-based　thermoelectric　thin　film　were　studied.　The　results　show　that　the　film　structure　of　the　sample　improves　significantly　with　the　increase　of　the　amount　of　Ag　doping.　After　the　doping,　two　new　phases,　Ag3Sb　and　Zn4Sb3,　appear　in　the　doped　film.　The　thermoelectric　properties　of　the　doped　films　improves　compared　to　those　of　the　films　without　doping.　The　dopant　has　a　great　influence　on　the　Seebeck　coefficient　of　the　sample　film.　It　is　concluded　that　the　two　new　phases,　Ag3Sb　and　Zn4Sb3　form　after　doping　are　the　key　factors　that　cause　the　structure　and　thermoelectric　properties　of　ZnSb-based　thermoelectric　thin　film.　©　2019,　Science　Press.　All　right　reserved.