High Open-Circuit Voltage in Full-Inorganic Sb2S3 Solar Cell via Modified Zn-Doped TiO2 Electron Transport Layer - Details

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Abstract：

Antimony　sulfide　(Sb2S3)　is　emerging　as　a　popular　photovoltaic　candidate　for　thin-film　solar　cells　due　to　its　large　absorption　coefficient,　suitable　bandgap,　nontoxic,　and　earth-abundant　nature.　The　performance　of　thermally　evaporated　Sb2S3　devices　is　severely　restricted　by　interfacial　recombination　leading　to　high　open-circuit　voltage　(VOC)　losses.　CdS　as　electron　transport　layer　(ETL)　has　overcome　this　problem,　but　triggered　lower　JSC　issues　due　to　parasitic　absorption　loss　conceding　to　its　smaller　bandgap.　Herein,　a　spray　pyrolysis　method　is　adopted　for　the　deposition　of　a　uniform　and　compact　Zn-doped　TiO2　film　with　tuned　energy　levels　to　facilitate　charge　extraction　and　transport.　The　solar　cell　fabricated　with　a　modified　TiO2　ETL　holds　superior　interface　quality,　high　build-in　potential,　and　suppressed　recombination　losses,　therefore　pronouncedly　improves　the　VOC.　As　a　result,　the　efficiency　of　the　device　is　boosted　from　4.41%　to　5.16%,　a　record　VOC　of　702　mV　for　Cd-free　full-inorganic　Sb2S3　solar　cell　is　achieved.　These　findings　are　expected　to　be　implemented　in　other　Sb-chalcogenide　solar　cells　to　further　enhance　the　device　performance.　©　2020　Wiley-VCH　GmbH

Keyword：

electron transport layers; open-circuit voltage; Sb2S3 solar cells; Zn-doped TiO2

Community：

[ 1 ] [Ishaq, M.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 2 ] [Chen, S.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 3 ] [Farooq, U.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 4 ] [Azam, M.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 5 ] [Deng, H.]State key laboratory of Photo catalysis on Energy and Environment, College of Physics and Information, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Su, Z.-H.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 7 ] [Zheng, Z.-H.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 8 ] [Fan, P.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
[ 9 ] [Song, H.-S.]Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
[ 10 ] [Liang, G.-X.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

Reprint 's Address：

[Chen, S.]Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen UniversityChina

Email：

chensh@szu.edu.cn

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Solar RRL

ISSN： 2367-198X

Year： 2020

8 . 5 8 2

JCR@2020

6 . 0 0 0

JCR@2023

ESI HC Threshold：196

JCR Journal Grade：1

CAS Journal Grade：2

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WoS CC Cited Count：

SCOPUS Cited Count： 29

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 0

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