In　conventional　quantum　dot　light-emitting　diodes　(QLEDs),　the　organic　charge　transport　materials　are　susceptible　to　erosion　by　water　and　oxygen,　which　would　reduce　the　efficiency　and　lifetime　of　the　devices.　Herein,　we　modified　the　surface　of　the　organic　hole　transport　layer　with　an　ultra-thin　Al2O3　layer,　which　is　deposited　by　using　atomic　layer　deposition　technique,　to　obtain　the　highly　efficient　and　stable　QLEDs.　It　is　indicated　that　the　ultra-thin　Al2O3　interlayer　plays　a　significant　role　in　decreasing　leakage　current,　suppressing　exciton　quenching　and　passivating　the　defects.　The　device　with　Al2O3　interface　modification　exhibits　the　maximum　external　quantum　efficiency　(EQE)　of　20.8%,　current　efficiency　(CE)　of　21.6　cd　A-1,　and　lifetime　of　482000　h.　In　comparison　with　the　control　device,　the　EQE,　CE　and　lifetime　are　improved　by　31%,　32%,　and　330%,　respectively.　The　results　indicate　that　the　strategy　of　Al2O3　interface　modification　could　provide　an　effective　way　for　realizing　highly　efficiency　QLED　with　long　lifetime.　©　1980-2012　IEEE.