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author:

Wang, X. (Wang, X..) [1] | Yan, Y. (Yan, Y..) [2] | Li, E. (Li, E..) [3] | Liu, Y. (Liu, Y..) [4] | Lai, D. (Lai, D..) [5] | Lin, Z. (Lin, Z..) [6] | Chen, H. (Chen, H..) [8] | Guo, T. (Guo, T..) [9]

Indexed by:

Scopus

Abstract:

Stretchable synaptic transistors (SSTs) are of paramount importance for the development of soft machines and neuromorphic systems. Unfortunately, the reports about SSTs are very limited and more importantly, the impact of the mechanical deformations that occur in stretchable electronics during practical applications, on the behavior of SSTs has never been reported. In this work, a simple and universal method was introduced to fabricate a stretchable organic synaptic transistor using wavy networks P3HT nanofibers as a semiconductor and the effect of mechanical deformation on its behavior at different deformation states is investigated for the first time. Our SSTs exhibited excellent mechanical stability even after experiencing large stretching deformation. More importantly, our results demonstrated that the learning and memory behavior, and the decay constants of synaptic transistors, which are among the most important parameters for biologic sensory neurons, can be tuned by mechanical deformation, which is associated with mechanical deformation dependant ion transport in ion-gel. These results offer a promising direction for utilizing mechanical deformation to develop different functional devices. Our SSTs with tunable synaptic behavior can facilitate the development of wearable and implantable artificial neuromorphic systems and soft machines. © 2020 Elsevier Ltd

Keyword:

Ion-gel; Mechanical deformation; Organic field effect transistor; Stretchable synaptic transistor; Wavy poly(3-hexylthiophen-2,5-diyl) nanofibrils

Community:

  • [ 1 ] [Wang, X.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Wang, X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Yan, Y.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Li, E.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Liu, Y.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Lai, D.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Lin, Z.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Liu, Y.]State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 9 ] [Chen, H.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 10 ] [Chen, H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 11 ] [Guo, T.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 12 ] [Guo, T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

Reprint 's Address:

  • [Chen, H.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou UniversityChina

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Source :

Nano Energy

ISSN: 2211-2855

Year: 2020

Volume: 75

1 7 . 8 8 1

JCR@2020

1 6 . 8 0 0

JCR@2023

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 84

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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