Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers using Co as a Sacrificial Catalyst Layer - Details

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Co　acts　as　both　an　etching　mask　and　a　catalyst　for　the　growth　of　grapheme,　high-quality　graphene　can　be　obtained　quickly　and　at　low　temperatures　for　transparent　electrode　applications　on　GaN　LEDs.　©　2020　OSA.

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[ 1 ] [Xiong, F.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Guo, W.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Dong, Y.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Wang, L.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Du, Z.]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Sun, J.]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China

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Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ISSN： 1092-8081

Year： 2020

Volume： 2020-May

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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