A stable backgated-type SnO2 nanowires field emitter for mass production - Details

author：

Guo, T.-L. (Guo, T.-L..) ^[1] | Ma, L.-A. (Ma, L.-A..) ^[2] | Lin, Z.-X. (Lin, Z.-X..) ^[3] | Ye, Y. (Ye, Y..) ^[4]

Indexed by：

Scopus

Abstract：

in　this　paper　we　report　the　fabrication　and　testing　of　backgated　triode　structure　field　emission　(FED)　devices　with　SnO2-nanowires-based　cathodes.　Field-emission　measurement　reveals　that　the　SnO2-nanowires　FED　devices　posses　a　good　emission　property　with　low　turn-on　voltage　(~150　V),　high　emission　current　(~　390　uμA)　and　long-term　emission　stability.　©　2009　IEEE.

Keyword：

Crystal growth; Field emission; Tin oxide

Community：

[ 1 ] [Guo, T.-L.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, Fuzhou, 350002, China
[ 2 ] [Ma, L.-A.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, Fuzhou, 350002, China
[ 3 ] [Ma, L.-A.]Department of materials science and Engineering, Fujian University of Technology, Fuzhou, 350014, China
[ 4 ] [Lin, Z.-X.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, Fuzhou, 350002, China
[ 5 ] [Ye, Y.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address：

[Guo, T.-L.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, Fuzhou, 350002, China

Email：

tlguo@hotmail.com

Show more details

Related Keywords：

Source ：

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Year： 2009

Page： 84-86

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to