SnS:　Ag　thin　films　were　deposited　on　ITO　by　pulse　electro-deposition.　They　were　characterized　with　X-ray　diffraction　spectroscopy　and　atomic　force　microscope.　The　as-deposited　films　have　a　new　phase　(Ag8SnS6)　with　good　crystallization　and　big　grain　size.　The　conductivity　of　the　films　was　measured　by　photoelectrochemical　test.　It　is　proved　that　the　SnS:　Ag　films　are　p-type　of　semiconductor.　Hall　measurement　shows　that　the　carrier　concentration　of　the　films　increases,　while　their　resistivity　decreases　after　Ag-doping.　©2008　Chinese　Institute　of　Electronics.