SnS　thin　films　were　deposited　on　glass　substrates　by　using　the　thermal　evaporation　technique　at　different　substrate　temperatures.　By　varying　the　substrate　temperature　in　the　range　of　50°C-200°C,　the　influence　of　the　substrate　temperature　on　the　microstructure,　morphology　and　photo-electrical　properties　of　the　films　was　investigated.　The　research　result　shows　following:　With　the　increase　of　substrate　temperature　from　50°C,　to　200°C,　the　crystallinity　and　smoothness　of　SnS　films　become　better,　and　the　grains　in　the　films　become　bigger,　and　the　average　roughness　is　reduced　from　19.1　nm　to　3.92　nm,　and　the　average　diameter　is　increased　from　100　nm　to　150　nm.　With　the　increase　of　substrate　temperature　from　50°C　to　200°C,　the　carrier　concentration　of　the　films　is　increased　from　7.118　×　1013　cm-3　to　2.169　×　1015　cm-3,　while　the　resistivity　is　decreased　from　641.8　Ω·cm　to　206.2　Ω·cm.　However,　the　substrate　temperature　has　no　effect　on　the　phase　and　conductivity　of　the　films.　The　SnS　films　prepared　at　different　substrate　temperature　are　polycrystalline　SnS　with　orthogonal　structure,　and　the　crystallites　in　the　films　are　exclusively　oriented　along　the　(111)　direction.　And　the　films　are　of　p-type　conduction.