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author:

Veeramalai, C.P. (Veeramalai, C.P..) [1] | Li, F. (Li, F..) [2] | Liu, Y. (Liu, Y..) [3] | Xu, Z. (Xu, Z..) [4] | Guo, T. (Guo, T..) [5] | Kim, T.W. (Kim, T.W..) [6]

Indexed by:

Scopus

Abstract:

In this work, we demonstrated the field emission properties of few layer molybdenum disulphide (MoS 2 ) nanosheets synthesized by a hydrothermal method. Structural investigation indicates the as-synthesized MoS 2 layers were two dimensional few layer nanosheets with a sharp atomic edges. The field emission properties of the MoS 2 nanosheets were investigated and the results indicate that the MoS 2 nanosheets had an excellent field emission performance with turn on field of 1.0 V/μm, threshold field of 2.1 V/μm, and a field enhancement factor of 9880. Furthermore, the emission current shows the stability over 2 h of continuous operation. The as-synthesized MoS 2 few layer nanosheets hold potential for application in next-generation field emission devices. © 2016 Elsevier B.V.

Keyword:

Field emission property; Hydrothermal synthesis; MoS 2 nanosheets; X-ray photoelectron spectroscopy

Community:

  • [ 1 ] [Veeramalai, C.P.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 3 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Liu, Y.]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
  • [ 5 ] [Xu, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Xu, Z.]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
  • [ 7 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Kim, T.W.]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea

Reprint 's Address:

  • [Li, F.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

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Source :

Applied Surface Science

ISSN: 0169-4332

Year: 2016

Volume: 389

Page: 1017-1022

3 . 3 8 7

JCR@2016

6 . 3 0 0

JCR@2023

ESI HC Threshold:324

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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