Bipolar resistive switching in Al/GO-PEDOT:PSS/Pt memory devices - Details

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Abstract：

We　propose　graphene　oxide　(GO)　poly(3,4-ethylenedioxythiophene):　polystyrene　sulfonate　(PEDOT:PSS)　as　new　resistive　memory　material　for　non-volatile　bipolar　resistive　switching　memories,　GO-PEDOT:PSS　composites　show　great　potential　for　resistance-change　use　in　high　density　flexible　nonvolatile　memories.　Repetitive　high-speed　switching,　low　switching　voltage　(about　±1-3V),　tight　distributions　of　HRS　and　LRS　and　long　retention　of　more　than　10　4　s　have　been　successfully　demonstrated.　The　mechanism　of　conduction　and　resistance　switching　are　studied.　©　2016　IEEE.

Keyword：

bipolar; graphene oxide; PEDOT:PSS; resistive random-access memory

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[ 1 ] [Chao, H.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 2 ] [Yuan, F.-Y.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 3 ] [Wu, H.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 4 ] [Deng, N.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 5 ] [Wang, C.]State Key Laboratory of Organic-Inorganic Composites, Department of Polymer Engineering, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
[ 6 ] [Wei, R.]School of Physics and Information, College of Materials, Fuzhou University, Fuzhou, 350116, China

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2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Year： 2016

Page： 74-77

Language： English

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SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 7

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