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author:

Marikani, A. (Marikani, A..) [1] | Selvamurugan, V. (Selvamurugan, V..) [2] | Mangamma, G. (Mangamma, G..) [3] | Ravi, S. (Ravi, S..) [4] | Krishnasharma, R. (Krishnasharma, R..) [5] | Chandrasekar, P.V. (Chandrasekar, P.V..) [6] | Kamruddin, M. (Kamruddin, M..) [7] | Madhavan, D. (Madhavan, D..) [8]

Indexed by:

Scopus CSCD

Abstract:

This paper reports the synthesis of neodymium substituted bismuth titanate nanoparticles (BNdT) for ferroelectric random access memory (FeRAM) based applications using sol-gel route. X-ray diffraction pattern showed that the BNdT nanoparticles exhibited perovskite structure with orthorhombic phase. The microstructure of the BNdT nanoparticles showed that the grains were in spherical structure with a bi-modal distribution of spheres. Dielectric constant and dielectric loss of BNdT nanoparticles were measured in the frequency range 100 Hz to 100kHz. Nd-substituted BNdT nanoparticles showed the high remanent polarization (Pr=33.2 μC/cm2, Ec=62.5 kV/cm) than pure bismuth titanate (BT) (Pr=14.6 μC/cm2, Ec=182.8 kV/cm) ideal for FeRAM based applications. The occurrence of red shift in photoluminescence (PL) spectrum is considered to be due to the isomerisation that may occur from the heating of samples. © 2017 Chinese Materials Research Society

Keyword:

Dielectric properties; Ferroelectric materials; Nanostructures; Photoluminescence; Sol-gel method; X-ray diffraction

Community:

  • [ 1 ] [Marikani, A.]Department of Physics, Mepco Schlenk Engineering College, Sivakasi, 626005, India
  • [ 2 ] [Selvamurugan, V.]Department of Physics, Mepco Schlenk Engineering College, Sivakasi, 626005, India
  • [ 3 ] [Mangamma, G.]Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam, 603102, India
  • [ 4 ] [Ravi, S.]Department of Physics, Mepco Schlenk Engineering College, Sivakasi, 626005, India
  • [ 5 ] [Krishnasharma, R.]Department of Physics, Mepco Schlenk Engineering College, Sivakasi, 626005, India
  • [ 6 ] [Chandrasekar, P.V.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350 002, China
  • [ 7 ] [Kamruddin, M.]Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam, 603102, India
  • [ 8 ] [Madhavan, D.]Department of Chemistry, Mepco Schlenk Engineering College, Sivakasi, 626005, India

Reprint 's Address:

  • [Selvamurugan, V.]Department of Physics, Mepco Schlenk Engineering CollegeIndia

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Source :

Progress in Natural Science: Materials International

ISSN: 1002-0071

Year: 2016

Issue: 6

Volume: 26

Page: 528-532

2 . 0 3 8

JCR@2016

4 . 8 0 0

JCR@2023

ESI HC Threshold:324

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 24

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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