Graphene oxide and TiO2 nano-particle composite based nonvolatile memory - Details

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Abstract：

We　report　a　novel　resistive　random-access　memory　(RRAM)　device　with　a　graphene　oxide　(GO)　composite　film　embedded　with　TiO2　nano-particles　as　its　resistive　switching　layer.　The　efficient　physi-(or　chem-)　sorption　of　TiO2　endows　the　GO/TiO2　composites　with　superior　bipolar　resistive　switching　behaviors,　including　low　switching　voltage　(about　±1V),　tight　distributions　of　HRS　and　LRS,　long　retention　of　more　than　104s　and　steady　endurance　performances,　which　is　superior　than　GO　device.　The　mechanism　of　conduction　and　resistance　switching　are　studied.　©　2015　IEEE.

Keyword：

bipolar; graphene oxide; resistive random-access memory; TiO2 nano-particles

Community：

[ 1 ] [Chao, H.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 2 ] [Yuan, F.-Y.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 3 ] [Wu, H.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 4 ] [Deng, N.]Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
[ 5 ] [Yu, Z.-Z.]State Key Laboratory of Organic-Inorganic Composites, Department of Polymer Engineering, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
[ 6 ] [Wei, R.]School of Physics and Information, College of Materials, Fuzhou University, Fuzhou, 350116, China

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[Chao, H.]Institute of Microelectronics, Tsinghua UniversityChina

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Source ：

2015 15th Non-Volatile Memory Technology Symposium, NVMTS 2015

Year： 2016

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 7

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 4

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