Solution-Processed, Flexible, and Transparent Non-Volatile Memory with Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers - Details

author：

Lin, J. (Lin, J..) ^[1] | Ooi, P.C. (Ooi, P.C..) ^[2] | Li, F. (Li, F..) ^[3] | Guo, T. (Guo, T..) ^[4] | Kim, T.W. (Kim, T.W..) ^[5]

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Abstract：

Non-volatile　memory　(NVM)　devices　using　graphene　quantum　dots　(GQDs)　as　charge　trapping　sites　were　fabricated　with　silver　nanowires　as　top　electrodes　using　solution　process.　The　stacking　structure　consists　of　GQDs　embedded　between　polymethylsilsesquioxane　layers　constructed　on　transparent　flexible　substrate.　Hysteresis　window　was　observed　in　the　current-voltage　plots,　and　the　NVM　devices　are　reprogrammable　and　stable　up　to　×　104　s　with　a　distinct　ON/OFF　ratio　of　104.　In　addition,　the　memory　device　shows　the　stable　hysteresis　window　without　obvious　degradation　upon　bending　under　different　curvature　radii.　©　1980-2012　IEEE.

Keyword：

flexible; Graphene quantum dots; non-volatile memory; silver nanowires

Community：

[ 1 ] [Lin, J.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 2 ] [Ooi, P.C.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 3 ] [Li, F.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 4 ] [Guo, T.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 5 ] [Kim, T.W.]Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea

Reprint 's Address：

[Li, F.]Institute of Optoelectronic Display, Fuzhou UniversityChina

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Source ：

IEEE Electron Device Letters

ISSN： 0741-3106

Year： 2015

Issue： 11

Volume： 36

Page： 1212-1214

2 . 5 2 8

JCR@2015

4 . 1 0 0

JCR@2023

ESI HC Threshold：183

JCR Journal Grade：1

CAS Journal Grade：2

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WoS CC Cited Count：

SCOPUS Cited Count： 14

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 1

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