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author：

Song, K. (Song, K..) [1] | Zhang, F. (Zhang, F..) [2] | Chen, D. (Chen, D..) [3] | Wu, S. (Wu, S..) [4] | Zheng, P. (Zheng, P..) [5] | Huang, Q. (Huang, Q..) [6] | Jiang, J. (Jiang, J..) [7] | Xu, J. (Xu, J..) [8] | Qin, H. (Qin, H..) [9]

Indexed by：

Scopus

Abstract：

Si3N4　modified　Li2Sr0.995SiO4:0.005Eu2+　(Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+)　phosphors　were　synthesized　with　the　conventional　solid-state　reaction　in　the　reduced　atmosphere.　The　crystal　structure　and　vibrational　modes　were　analyzed　by　X-ray　diffraction,　Raman　scattering　spectroscopy　and　Rietveld　crystal　structure　refinement.　Photoluminescence　(PL)　and　photoluminescence　excitation　(PLE)　spectra　showed　that　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　powder　exhibited　a　broad　yellow　emission　band　centered　at　560　nm　under　the　excitation　of　460　nm　visible　light,　due　to　the　4f65d1　→　4f7　transition　of　Eu2+.　The　partial　nitridation　of　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　(x　=　0.01)　phosphors　led　to　a　large　enhancement　in　the　luminescence　intensity,　as　much　as　190%.　At　the　same　time,　the　fluorescence　decay　behavior　curves　further　showed　that　the　photoluminescence　efficiencies　of　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　phosphors　were　enhanced　by　addition　of　Si3N4.　The　temperature　quenching　characteristics　confirmed　that　the　oxynitride　based　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　showed　slightly　higher　stability.　It　is　implied　that　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　phosphors　had　a　possible　potential　application　on　white　LEDs　to　match　blue　light　chips.　©　2015　Elsevier　Ltd.　All　rights　reserved.

Keyword：

A Crystal structure Optical materials; B Optical properties; C X-ray diffraction; D

Community：

  • [ 1 ] [Song, K.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 2 ] [Zhang, F.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 3 ] [Chen, D.]College of Materials Sciences and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 4 ] [Wu, S.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 5 ] [Zheng, P.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 6 ] [Huang, Q.]Instrument Analysis and Testing Center, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Jiang, J.]Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
  • [ 8 ] [Xu, J.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
  • [ 9 ] [Qin, H.]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China

Reprint 's Address：

  • [Song, K.]College of Electronic Information and Engineering, Hangzhou Dianzi UniversityChina

Email：


kxsong@hdu.edu.cn
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Source ：

Materials Research Bulletin

ISSN： 0025-5408

Year： 2015

Volume： 70

Page： 309-314

2 . 4 3 5

JCR@2015

5 . 3 0 0

JCR@2023

ESI HC Threshold：335

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

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