This　paper　describes　a　study　on　the　surface-conduction　field　emission　(SCFE)　electron　sources　based　on　island-like　tin　oxide　(SnO2)　film　by　magnetron　sputtering,　conventional　photolithography　and　lift-off　method.　The　images　of　island-like　SnO2　film　were　characterized　by　the　optical　microscopy　and　atomic　force　microscopy　(AFM).　Field　emission　(FE)　characteristics　of　SCFE　electron　sources　with　SnO2　film　were　also　investigated.　The　AFM　images　show　that　the　diameter　of　island-like　SnO2　film　is　approximately　100-300　nm　and　the　gap　of　most　island-like　SnO2　film　is　around　10-30　nm.　FE　properties　reveal　that　the　emission　current　and　conducted　current　are　completely　controlled　by　gate　voltage.　The　electron　emission　efficiency　is　around　0.95%　when　the　anode　voltage　and　gate　voltage　was　fixed　to　be　3.2　kV　and　238　V,　respectively,　at　the　anode-cathode　gap　of　500　μm.　The　emission　images　obviously　become　brighter　and　more　uniform　with　the　increases　of　the　gate　voltage　and　the　maximum　brightness　can　reach　850　cd/m2.　The　emission　current　fluctuation　is　smaller　than　5%　for　4　h,　which　indicated　that　the　fabricated　electron　sources　have　an　efficient　field　emission　performance.　©　2015　Elsevier　Ltd　All　rights　reserved.