The　study　of　thermal　properties　for　GaN-based　light-emitting　diodes　(LEDs)　with　various　last　barrier　thicknesses　was　reported.　It　was　found　that　the　LED　output　power　decreased　as　we　increased　the　thickness　of　the　last　barrier.　It　was　also　found　that　the　LED　output　powers　decrease　with　the　increase　of　temperature　for　the　LEDs　with　12-,　24-,　and　48-nm-thick　last　barriers.　However,　it　was　found　that　the　LED　output　power　increases　with　the　increase　of　temperature　for　the　LED　with　a　72-nm-thick　last　barrier　due　to　the　fact　that　more　holes　could　enter　the　multiquantum　well　active　region　at　elevated　temperatures.　Furthermore,　it　was　found　that　the　output　power　decreased　by　0.15%/°C,　0.15%/°C,　and　0.11%/°C　for　the　LEDs　with　12-,　24-,　and　48-nm-thick　last　barriers,　respectively,　but　increased　by　0.09%/°C　for　the　LED　with　a　72-nm-thick　last　barrier.　©　2015　Society　of　Photo-Optical　Instrumentation　Engineers.