Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors - Details

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Abstract：

In　this　letter,　high-performance　amorphous　indium-gallium-zinc-oxide　(a-InGaZnO)　and　indium-tin-oxide　(ITO)　nanowire　(NW)　composite　thin-film　transistors　(TFTs)　are　fabricated　via　a　sol-gel　approach.　By　incorporating　0.5　wt%　ITO　NWs　into　the　a-InGaZnO　thin　film,　the　composite　TFTs　can　achieve　an　enhanced　field-effect　mobility　of　76.5　cm2/V　·　s　and　a　high　current　density　of　73.3　μA/μm　with　10-μm　channel　length.　The　low-frequency　noise　(LFN)　characteristic　of　the　composite　TFTs　fits　the　classical　1/f　noise　model　very　well　in　the　frequency　range　1　to　1000　Hz.　The　subthreshold　slope　and　LFN　results　provide　an　alternative　explanation　to　the　enhanced　performance　of　the　composite　TFTs　due　to　the　decreased　interfacial　trap　density.　The　a-InGaZnO/ITO　NW　composite　TFTs　are　one　of　the　promising　candidates　for　the　development　of　high-speed　low-cost　electronics.　©　2017　IEEE.

Keyword：

1/f noise model; Amorphous indium-gallium-zinc-oxide (a-InGaZnO); indium-tin-oxide (ITO) nanowire (NW); low-frequency noise (LFN); thin-film transistors (TFTs)

Community：

[ 1 ] [Wan, D.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China
[ 2 ] [Abliz, A.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China
[ 3 ] [Su, M.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China
[ 4 ] [Liu, C.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China
[ 5 ] [Jiang, C.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China
[ 6 ] [Li, G.]Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
[ 7 ] [Chen, H.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 8 ] [Guo, T.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 9 ] [Liu, X.]Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
[ 10 ] [Liao, L.]School of Physics and Technology, Wuhan University, Wuhan, 430072, China

Reprint 's Address：

[Liao, L.]School of Physics and Technology, Wuhan UniversityChina

Email：

liaolei@whu.edu.cn

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Source ：

IEEE Electron Device Letters

ISSN： 0741-3106

Year： 2017

Issue： 11

Volume： 38

Page： 1540-1542

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SCOPUS Cited Count： 11

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