Cu2ZnSnS4　(CZTS)　thin　films　were　synthesised　on　glass　substrates　by　sulphurising　sputtered　metallic　precursors　in　H2S + N2　atmosphere　at　500 °C.　The　influences　of　the　radio　frequency　(RF)　sputtering　power　on　the　structure,　surface　morphology,　optical　and　electrical　properties　of　the　thin　films　were　investigated.　Scanning　electron　microscopy,　X-ray　diffraction,　Raman　and　UV–vis　NIR　spectroscopy　were　used　to　characterise　the　films.　All　the　CZTS　thin　films　exhibited　a　dominant　kesterite　structure.　With　increasing　sputtering　power,　secondary　phases　in　the　films　reduced,　and　the　surface　became　more　compact.　The　optimum　quality　films　with　poor-Cu　and　rich-Zn　were　obtained　when　the　sputtering　power　was　90 W,　and　the　optical　band　gap,　carrier　concentration,　resistivity　and　mobility　were　1.47 eV,　2.07 × 1018 cm−3,　2.37 Ω cm　and　1.38 cm2 s−1 v−1,　respectively.　The　optical　and　electrical　properties　of　the　CZTS　thin　films　in　relation　to　the　secondary　phases　were　discussed.　©　2016　Informa　UK　Limited,　trading　as　Taylor　&　Francis　Group.