In　this　study,　we　fabricated　and　analyzed　resistance　switching　characteristics　for　resistive　random　access　memory　(ReRAM)　cell　with　Ta　dopant　into　silicon　oxide　layer　by　co-sputtering　at　room　temperature.　From　the　current-voltage　measurements,　it　was　found　that　the　current　conduction　in　high　resistive　state　was　first　dominated　by　Ohmic　conduction　caused　by　the　intrinsic　carriers　in　the　Ta:SiOx　thin　film　and　then　turned　to　space-charge-limited-current　(SCLC)　mechanism.　In　low　resistance　state　(LRS),　the　current　conduction　mechanism　from　higher　voltage　to　lower　voltage　were　dominated　by　Fowler-Nordheim　(F-N)　tunneling　and　then　SCLC　mechanism,　and　finally　dominated　by　Ohmic　conduction　mechanism.　Furthermore,　it　was　found　that　the　Ti/Ta:SiOx/Pt　RRAM　cell　fabricated　in　this　study　was　durable　and　reliable.　©　2014　Elsevier　Ltd.