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author:

Zheng, L.-W. (Zheng, L.-W..) [1] | Hu, L.-Q. (Hu, L.-Q..) [2] | Xiao, X.-J. (Xiao, X.-J..) [3] | Yang, F. (Yang, F..) [4] | Lin, H. (Lin, H..) [5] | Guo, T.-L. (Guo, T.-L..) [6]

Indexed by:

Scopus CSCD

Abstract:

A novel magnetically controlled Ni-plating method has been developed to improve the field-emission properties of carbon nanotubes (CNTs). The effect of the magnetic field and Ni-electroplating on CNT field-emission properties was investigated, and the results are demonstrated using scanning electron microscopy, J - E and the duration test. After treatment, the turn-on electric field declines from 1.55 to 0.91 V/μm at an emission current density of 100 μA/cm 2, and the emission current density increases from 0.011 to 0.34 mA/cm 2 at an electric field of 1.0 V/μm. Both the brightness and uniformity of the CNT emission performance are improved after treatment. © 2011 Chinese Physical Society and IOP Publishing Ltd.

Keyword:

Carbon nanotubes; field emission; magnetic field; Ni-electroplate

Community:

  • [ 1 ] [Zheng, L.-W.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Hu, L.-Q.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Xiao, X.-J.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 4 ] [Yang, F.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 5 ] [Lin, H.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 6 ] [Guo, T.-L.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

  • [Guo, T.-L.]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

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Source :

Chinese Physics B

ISSN: 1674-1056

Year: 2011

Issue: 12

Volume: 20

1 . 3 7 6

JCR@2011

1 . 5 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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