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author:

Zeng, S.-F. (Zeng, S.-F..) [1] | Chen, W.-Z. (Chen, W.-Z..) [2]

Indexed by:

Scopus

Abstract:

In this study AZ31 sheet with a thickness of 1.2mm and diameter of 52mm was simulated to press into a dish by a finite element method(FEM) software, which to obtain better processing of plastics forming of magnesium alloy by varying die parameters. In order to find the way of development on drawing property and to formulate the rational stamping processing, simulations have been applied on the maximum principal stress various with round radius of dent die and round radius of punch and die gap. Simulation results show that: to obtain a dish of 29mm diameter, a sheet of AZ31 magnesium with a thickness of 1.2mm and diameter of 52mm has been drawn, the fracture occurring at the corner of dish wall bottom. the ability of drawing varies with the round radius of dent die, which better radius is 3.8 mm. In the same way better round radius of punch is 3.0 mm, while better half gap is 1.8mm. Experiments also show that high diameter ratio has been increased with the various of die parameters and forming ability of material has been developed. It is reliable of simulation of finite element method. © (2011) Trans Tech Publications, Switzerland.

Keyword:

Die parameters; Finite element method simulation; High diameter ratio; Magnesium alloy; Maximum principal stress

Community:

  • [ 1 ] [Zeng, S.-F.]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Zeng, S.-F.]Fujian University of Technology, Fuzhou 350108, China
  • [ 3 ] [Chen, W.-Z.]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Chen, W.-Z.]Fujian University of Technology, Fuzhou 350108, China

Reprint 's Address:

  • [Zeng, S.-F.]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China

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Source :

Key Engineering Materials

ISSN: 1013-9826

Year: 2011

Volume: 480-481

Page: 634-638

Language: English

0 . 2 2 4

JCR@2005

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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