Cu-doped　tin　sulphide　(SnS)　films　with　a　thickness　of　about　300nm　have　been　grown　on　glass　substrates　by　thermal　evaporation　technique.　Different　Cu-doped　SnS　films　were　obtained　by　controlling　the　Cu　evaporation　time　to　roughly　alter　Cu-doping　concentration　in　SnS　films　(from　5.7　to　23atom).　Then　they　were　annealed　at　a　temperature　of　250°C　and　a　pressure　of　5.0×10　-3Pa　for　90min.　The　structural,　optical　and　electrical　properties　of　the　films　were　characterised　by　X-ray　diffraction,　atomic　force　microscopy,　ultraviolet-visible-near　infrared　spectrometer　and　Hall-effect　measurement　system.　All　the　films　are　polycrystalline　SnS　with　orthorhombic　structure,　and　the　crystallites　in　the　films　are　all　exclusively　oriented　along　(111)　direction.　Annealing　can　optimise　the　crystallinity　of　all　the　films.　With　the　increase　of　Cu-doping　concentration,　the　grain　size　of　the　films　becomes　larger　and　larger,　but　the　roughness　decreases.　Meanwhile,　the　evaluated　direct　bandgap　Eg　of　the　SnS:Cu　films　initially　decreases,　reaches　a　minimum　value　of　1.38eV　with　15atom　Cu　and　then　increases　thereafter.　The　carrier　concentration　of　the　films　increases　sharply,　while　the　resistivity　of　the　films　decreases　straightly.　All　the　films　are　of　p-type　conductivity.　Using　the　optimised　conditions,　it　is　possible　to　prepare　SnS:Cu　thin　films　suitable　for　absorbers　of　thin　film　solar　cells.　©　2011　The　Institution　of　Engineering　and　Technology.