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author:

Ma, L.A. (Ma, L.A..) [1] | Lin, J.Y. (Lin, J.Y..) [2] | Hu, L.Q. (Hu, L.Q..) [3] | Ye, Y. (Ye, Y..) [4] | Guo, T.L. (Guo, T.L..) [5]

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Scopus

Abstract:

A high yield of ultralong SnO2 nanowires is successfully achieved by a simple thermal evaporation of SnO powders under air ambient. The as-synthesized SnO2 nanobelts are single crystals with rutile structure. A backgated triode device for high-current applications has been developed with beltlike SnO2 field emitters. The devices have confirmed triode operation with low turn-on gate voltage (about 170 V) and stable electron emission with brightness of 30 cd/m2. © (2011) Trans Tech Publications.

Keyword:

Crystal growth; Field emission; Nanobelts; Tin oxide

Community:

  • [ 1 ] [Ma, L.A.]Department of Materials Science and Engineering, Fujian University of Technology, xueyuan road No.3, Fuzhou, 350108, China
  • [ 2 ] [Lin, J.Y.]Department of Materials Science and Engineering, Fujian University of Technology, xueyuan road No.3, Fuzhou, 350108, China
  • [ 3 ] [Lin, J.Y.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, GongYe Road No.523, Fuzhou, 350002, China
  • [ 4 ] [Hu, L.Q.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, GongYe Road No.523, Fuzhou, 350002, China
  • [ 5 ] [Ye, Y.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, GongYe Road No.523, Fuzhou, 350002, China
  • [ 6 ] [Guo, T.L.]Institutes of Optoelectronics and Displays Technology, Fuzhou University, GongYe Road No.523, Fuzhou, 350002, China

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Source :

Advanced Materials Research

ISSN: 1022-6680

Year: 2011

Volume: 239-242

Page: 1088-1091

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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