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author:

Liu, W. (Liu, W..) [1] | Cheng, S. (Cheng, S..) [2]

Indexed by:

Scopus CSCD

Abstract:

As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that, the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 °C, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputteringpower, substrate temperature and work pressure are 30 W, 150 °C, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10-4 Ω · cm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

Keyword:

DC magnetron sputtering; Electrical properties; ITO thin films; Optical properties

Community:

  • [ 1 ] [Liu, W.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China

Reprint 's Address:

  • [Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China

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Source :

Journal of Semiconductors

ISSN: 1674-4926

Year: 2011

Issue: 1

Volume: 32

4 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 27

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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