Growth and inclusion defect analysis of Ba2TiSi2O8 crystal - Details

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Abstract：

Ba2TiSi2O8　crystals　were　grown　by　Czochraski　method　and　the　crystal　defects　were　analyzed　by　SEM　and　EDS.　The　results　showed　that　the　impurity　elements　of　Na,　K,　Cl　in　polycrystalline　materials　were　the　main　inducements　of　generating　the　inclusion　defects　in　as-grown　crystal.　Lower　growth　rate　and　faster　rotation　velocity　were　benefit　to　obtain　high-quality　BTS　crystal.　Moreover,　the　hardness　and　the　optical　transmission　spectrum　were　also　measured　and　analyzed.

Keyword：

Ba2TiSi2O8; Crystal defect; Czochralski method; Hardness

Community：

[ 1 ] [Liu, X.-F.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 2 ] [Wei, Q.-K.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 3 ] [Yu, J.-B.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 4 ] [Hu, X.-L.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 5 ] [Zhuang, N.-F.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 6 ] [Lin, S.-K.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China
[ 7 ] [Chen, J.-Z.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China

Reprint 's Address：

[Zhuang, N.-F.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350116, China

Email：

nfzhuang@fzu.edu.cn

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Source ：

Journal of Synthetic Crystals

ISSN： 1000-985X

Year： 2013

Issue： 12

Volume： 42

Page： 2495-2499,2531

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ESI Highly Cited Papers on the List： 0 Unfold All

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