Characteristics of flexible thin-film transistors with zno channels - Details

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Abstract：

In　this　paper,　we　demonstrate　the　fabrication　of　ZnO-based　thin-film　transistors　(TFTs)　on　flexible　substrates　(polyethylene　terephthalate)　through　radio-frequency　sputtering　and　low-temperature　procedure.　The　device　structure　belongs　to　bottom-gate　type　TFTs　where　ZnO　and　HfO2　are　used　as　channel　and　gate　dielectric　layer,　respectively.　XRD　results　show　that　the　ZnO　channel　layers　are　hexagonal　wurtzite　structure　with　(002)　orientation.　The　properties　of　the　fabricated　devices　are　also　characterized　within　several　environmental　and　physics　conditions.　It　can　be　found　that　the　flexible　TFT　device　is　with　a　low　operating　voltage　and　high　current　ON/OFF　ratio;　the　gate　leakage　current　and　transparency　are　found　to　be　∼　12　nA　and　75%,　respectively.　The　gate　leakage　current　(IG),　drain-source　current　(IDS),　ON/OFF　current　ratio　(ION/OFF),　threshold　voltage　(Vth),　and　field-effect　mobility　(μFE)　are　measured　under　different　bending　modes.　©　2013　IEEE.

Keyword：

Flexible electronics; Polyethylene; Zinc oxide

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[ 1 ] [Ji, L.-W.]Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
[ 2 ] [Wu, C.-Z.]Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
[ 3 ] [Fang, T.-H.]Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
[ 4 ] [Hsiao, Y.-J.]National Nano Device Laboratories, Tainan 741, Taiwan
[ 5 ] [Meen, T.-H.]Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
[ 6 ] [Water, W.]Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
[ 7 ] [Chiu, Z.-W.]Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
[ 8 ] [Lam, K.-T.]Institute of Creative Industry Research, Fuzhou University, Fuzhou 350108, China

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IEEE Sensors Journal

ISSN： 1530-437X

Year： 2013

Issue： 12

Volume： 13

Page： 4940-4943

1 . 8 5 2

JCR@2013

4 . 3 0 0

JCR@2023

JCR Journal Grade：1

CAS Journal Grade：3

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SCOPUS Cited Count： 17

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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