Constructing Ag nanoparticles-single wall carbon hybrid nanostructure to improve field emission properties - Details

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Abstract：

The　overall　process　of　field　emission　can　be　dominated　by　the　contact　resistance　between　the　single　wall　carbon　nanotubes　(SWCNTs)　and　the　substrate.　In　order　to　reduce　the　contact　resistance,　we　present　a　wet　chemical　process　of　constructing　Ag-SWCNTs　hybrid　nanostructure.　Constructing　Ag-SWCNTs　emitters　could　improve　the　electrical　contact　by　increasing　the　contact　area　between　SWCNTs　and　substrate.　Contact　resistance　is　greatly　reduced　compared　to　that　of　pristine　SWCNTs.　Field　emission　properties　of　Ag-SWCNTs　hybrid　emitters　including　current　density　and　emitting　image　are　remarkably　improved.　Field　emission　properties　based　on　the　modified　Fowler-Nordheim　(F-N)　equation　are　discussed.　Our　studies　show　that　this　method　can　enhance　the　field　emission　properties　of　the　SWCNTs　by　improving　the　contact　resistance　and　is　a　promising　way　for　mass　production　of　SWCNTs　for　field　emission　display.　©　2012　Elsevier　B.V.　All　rights　reserved.

Keyword：

Ag nanoparticles; Contact resistance; Field emission; Hybrid nanostructure; Single wall carbon nanotubes (SWCNTs)

Community：

[ 1 ] [Chen, L.]College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
[ 2 ] [Chen, L.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 3 ] [Wang, L.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 4 ] [Yu, X.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 5 ] [Zhang, S.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 6 ] [Li, D.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 7 ] [Xu, C.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 8 ] [Zeng, L.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 9 ] [Zhou, S.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 10 ] [Zhao, J.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China
[ 11 ] [Guo, F.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 12 ] [Hu, L.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 13 ] [Yang, D.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China

Reprint 's Address：

[Yang, D.]State Key Laboratory for Silicon Materials, Zhejiang University, Hang Zhou 310027, China

Email：

mseyang@zju.edu.cn

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Source ：

Applied Surface Science

ISSN： 0169-4332

Year： 2013

Volume： 265

Page： 187-191

2 . 5 3 8

JCR@2013

6 . 3 0 0

JCR@2023

JCR Journal Grade：1

CAS Journal Grade：2

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WoS CC Cited Count：

SCOPUS Cited Count： 15

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 0

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