Binary　RuO2-HfO2　films　on　Ti　substrates　were　prepared　by　a　thermal　decomposition　method.　cyclic　voltammetric　and　charge/discharge　properties　of　the　RuO2-HfO2　electrodes　were　characterized.　It　was　determined　that　the　incorporation　of　HfO2　into　RuO　2　greatly　improved　the　capacitive　properties　of　the　material.　The　RuO2-HfO2　electrodes　showed　excellent　cyclic　stability,　with　no　decay　in　charge　capability　during　1000　CV　cycles　in　acidic　solution.　A　nominal　content　of　50　mol%　RuO2　and　50　mol%　HfO2　gave　the　highest　specific　capacitance　of　789.3　F/g　(RuO2).　The　excellent　capacitive　properties　and　stability　were　related　to　the　hydrous　amorphous　mixed-oxides　formed　in　the　film.　This　work　proves　that　high　capacitive　performance　of　RuO2-based　electrode　materials　can　be　obtained　by　thermal　decomposition,　even　with　the　retained　chloride　in　the　film.　©　2013　The　Authors.　Published　by　Elsevier　B.V.