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We numerically investigated the relationship between the transverse waveguide geometry and the continuous wave Raman gain in SOI rib waveguide Raman amplifiers. By optimizing the transverse geometric size, a Raman gain enhancement can be achieved in silicon rib waveguides with small effective carrier lifetime. © 2012 IEEE.
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Proceedings - ICOCN 2012: 2012 11th International Conference on Optical Communications and Networks
Year： 2012
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 1
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