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The electronic structure and photoactivation process in N-doped TiO 2 is investigated. Diffuse reflectance spectroscopy (DRS), photoluminescence (PL), and electron paramagnetic resonance (EPR) are employed to monitor the change of optical absorption ability and the formation of N species and defects in the heat- and photoinduced N-doped TiO 2 catalyst. Under thermal treatment below 573 K in vacuum, no nitrogen dopant is removed from the doped samples but oxygen vacancies and Ti 3+ states are formed to enhance the optical absorption in the visible-light region, especially at wavelengths above 500 nm with increasing temperature. In the photoactivation processes of N-doped TiO 2, the DRS absorption and PL emission in the visible spectral region of 450-700 nm increase with prolonged irradiation time. The EPR results reveal that paramagnetic nitrogen species (N s .), oxygen vacancies with one electron (V o .), and Ti 3+ ions are produced with light irradiation and the intensity of N s . species is dependent on the excitation light wavelength and power. The combined characterization results confirm that the energy level of doped N species is localized above the valence band of TiO 2 corresponding to the main absorption band at 410 nm of N-doped TiO 2, but oxygen vacancies and Ti 3+ states as defects contribute to the visible-light absorption above 500 nm in the overall absorption of the doped samples. Thus, a detailed picture of the electronic structure of N-doped TiO 2 is proposed and discussed. On the other hand, the transfer of charge carriers between nitrogen species and defects is reversible on the catalyst surface. The presence of oxygen-vacancy-related defects leads to quenching of paramagnetic N s . species but they stabilize the active nitrogen species N s -. Seeing the light: Nitrogen species in N-doped TiO 2 act as photoactive centers for photogenerated electron transfer to adjacent defect sites. Their energy level is localized above the valence band of TiO 2 corresponding to the main absorption band at 410 nm of N-doped TiO 2 (see picture; N s .=paramagnetic nitrogen species, V o .=oxygen vacancy with one electron). © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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ChemPhysChem
ISSN: 1439-4235
Year: 2012
Issue: 6
Volume: 13
Page: 1542-1550
3 . 3 4 9
JCR@2012
2 . 3 0 0
JCR@2023
JCR Journal Grade:1
CAS Journal Grade:3
Cited Count:
SCOPUS Cited Count: 34
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 7
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