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author:

Yang, Z.-X. (Yang, Z.-X..) [1] | Li, X.-X. (Li, X.-X..) [2] | Yu, Y. (Yu, Y..) [3]

Indexed by:

Scopus PKU CSCD

Abstract:

The dynamic response of a piezoresistive high g's micro electromechanical system (MEMS) accelerometer under a sine pulse of acceleration with 100,000 g's peak was simulated by using finite element method (FEM). Firstly, a multi-segments-plates-approximate model of curved surface damping suitable for this component was established. Subsequently, the effects of damping gap width and the characteristics of damping media on the dynamic shock response of component were studied with ANSYS FEM technology. Results show that the dynamic responses of component were in fact the superposition of the forced vibration with dynamic shock and vibration of cantilever in its inherent frequency. When the damping gap width was very small, output result behaved as the forced vibration under dynamic shock. With the increase of damping gap width, the vibration of cantilever became more outstanding and the peak output voltage increased linearly while the time corresponding to the peak output voltage decreased nonlinearly. Under the same conditions, with higher viscosity coefficient of damping media, the output response curve became smoother, besides the peak voltage became lower. Therefore, in air damping media, the damping gap width at the beam bottom should be controlled between 0.5 μn and 0.65 μm to gain the best dynamic response.

Keyword:

Curved overload protection; High g accelerometer; Shock response; Squeeze-film damping

Community:

  • [ 1 ] [Yang, Z.-X.]Department of Electronics Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Li, X.-X.]Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • [ 3 ] [Yu, Y.]Department of Electronics Science and Applied Physics, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

  • [Yang, Z.-X.]Department of Electronics Science and Applied Physics, Fuzhou University, Fuzhou 350002, China

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Source :

Opto-Electronic Engineering

ISSN: 1003-501X

Year: 2006

Issue: 9

Volume: 33

Page: 138-144

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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