Study on the stress of silicon nitride thin films prepared by PECVD - Details

author：

Yu, Y. (Yu, Y..) ^[1] | Luo, Z.-Z. (Luo, Z.-Z..) ^[2] | Weng, X.-Q. (Weng, X.-Q..) ^[3]

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Abstract：

The　residual　stresses　on　silicon　nitride　thin　films　that　were　fabricated　by　PECVD　were　studied　in　this　paper.　A　wafer-curvature　measurement　method　was　used　to　determine　the　stresses　of　silicon　nitride　films.　The　structure　of　fixed-fixed　beam　was　also　developed　to　compare　with　the　stress　measurement.　The　contributions　of　processing　parameters　on　the　stress　of　silicon　nitride　films　were　analyzed.

Keyword：

PECVD; Residual stress; Silicon nitride films

Community：

[ 1 ] [Yu, Y.]Dept. of Electronics Science and Applied Physics, Fuzhou University, 350002, China
[ 2 ] [Luo, Z.-Z.]Sah Pen-dung MEMS Research Center, Xiamen University, 361005, China
[ 3 ] [Weng, X.-Q.]Sah Pen-dung MEMS Research Center, Xiamen University, 361005, China

Reprint 's Address：

[Yu, Y.]Dept. of Electronics Science and Applied Physics, Fuzhou University, Fuzhou 350002, China

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Source ：

Proceedings of SPIE - The International Society for Optical Engineering

ISSN： 0277-786X

Year： 2005

Volume： 5774

Page： 212-215

Language： English

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SCOPUS Cited Count： 1

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