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author:

Cheng, S. (Cheng, S..) [1] | Huang, C. (Huang, C..) [2] | Chen, Y. (Chen, Y..) [3] | Chen, G. (Chen, G..) [4]

Indexed by:

Scopus PKU CSCD

Abstract:

Sn0.995S1.005 film is prepared By constant current cathodic electro-deposition under the conditions of pH=2.7, Sn2+/S2O3 2-=1/5, J=3.0 mA/cm2, t=5 h. The film is characterized with XRD and SEM analysis, and is of polycrystalline with orthorhombic structure with grain size of 200-800 nm. Its direct band gap is estimated to be 1.23 eV from the optical measurement. The film is p-type conductivity with an electrical resistivity of 7.5 Ω·cm measured by the four-probe method.

Keyword:

Electrical and optical properties; Electro-deposition; SnS film

Community:

  • [ 1 ] [Cheng, S.]Department of Chemistry, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Cheng, S.]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Huang, C.]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 4 ] [Chen, Y.]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
  • [ 5 ] [Chen, G.]Department of Chemistry, Fuzhou University, Fuzhou 350002, China

Reprint 's Address:

  • [Cheng, S.]Department of Chemistry, Fuzhou University, Fuzhou 350002, China

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Source :

Chinese Journal of Semiconductors

ISSN: 0253-4177

Year: 2005

Issue: 6

Volume: 26

Page: 1173-1177

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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