Study the performance of AZ5214E image-reversal photoresist and its uses in lift-off technics - Details

author：

Chen, G.-H. (Chen, G.-H..) ^[1] | Yu, Y. (Yu, Y..) ^[2] | Luo, Z.-Z. (Luo, Z.-Z..) ^[3] | Wu, Q.-X. (Wu, Q.-X..) ^[4]

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Abstract：

The　performance　of　AZ5214E　image-reversal　photoresist　was　studied　and　achieves　negative　sidewalls　when　choosing　proper　processes.　They　are　good　for　lift-off　technics.　It　could　be　used　to　lift　off　2　μm　Au　for　the　facture　of　RF　MEMS　switch.　The　negative　sidewalls　can　be　observed　with　SEM.

Keyword：

AZ5214E; Image-reversal; Lift-off

Community：

[ 1 ] [Chen, G.-H.]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China
[ 2 ] [Yu, Y.]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China
[ 3 ] [Luo, Z.-Z.]Pen Tung Sah MEMS Res. Ctr., Xiamen Univ., Xiamen 361005, China
[ 4 ] [Wu, Q.-X.]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China

Reprint 's Address：

[Chen, G.-H.]Dept. of Electron. Sci. and Technol., Fuzhou Univ., Fuzhou 350002, China

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Source ：

Journal of Functional Materials

ISSN： 1001-9731

Year： 2005

Issue： 3

Volume： 36

Page： 431-433,440

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