• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

吴耿云 (吴耿云.) [1] | 程贤甦 (程贤甦.) [2] (Scholars:程贤甦) | 林俊鸿 (林俊鸿.) [3]

Indexed by:

CQVIP PKU CSCD

Abstract:

采用导电高分子材料聚(3,4-乙撑二氧噻吩)(PEDT)制备固体片式铝电解电容器,主要探索了化学聚合工艺对聚噻吩固体片式铝电解电容器性能的影响.结果表明,低的聚合溶液浓度可以提高所制备电容器的容量、降低损耗和等效串联电阻(ESR),但需要增加聚合次数以获得所需厚度的PEDT膜;化学聚合过程中烘干温度为40℃并进行适当次数的清洗,其所制备的产品容量较高,损耗较小,ESR低;增加聚噻吩的化学聚合次数可以提高电容器的容量引出水平,并降低损耗和ESR.

Keyword:

化学氧化聚合 固体片式铝电解电容器 聚(3,4-乙撑二氧噻吩)

Community:

  • [ 1 ] [吴耿云]福建国光新型电子元件与材料技术研究院
  • [ 2 ] [程贤甦]福州大学
  • [ 3 ] [林俊鸿]福建国光新型电子元件与材料技术研究院

Reprint 's Address:

Email:

Show more details

Related Keywords:

Related Article:

Source :

功能材料

ISSN: 1001-9731

CN: 50-1099/TH

Year: 2008

Issue: 3

Volume: 39

Page: 414-416

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count:

30 Days PV: 4

Online/Total:204/10010846
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1