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author:

陈光增 (陈光增.) [1] | 林吉申 (林吉申.) [2] (Scholars:林吉申)

Abstract:

本文讨论了JFET低频噪声与图形结构、材料质量等的关系,提出几点设计原则.用设计的管芯图形.配合一些新工艺技术,可研制成具有优异特性的低频低噪声高跨导JFET3DJ415.测量了该器件的噪声性能,并与通用器件作了比较.

Keyword:

位错 低频噪声 晶体缺陷 结型场效应晶体管 表面态 跨导

Community:

  • [ 1 ] 福州大学物理系

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Source :

福州大学学报(自然科学版)

ISSN: 1000-2243

CN: 35-1337/N

Year: 1987

Issue: 01

Page: 28-35

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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