Er3+-doped　Ba0.85Ca0.15Ti0.9Zr0.1O3　(xEr-BCTZ,　x　=　0,　0.005,　0.01)　ferroelectric-luminescent　thin　films　were　prepared　by　the　chemical　solution　deposition　method.　The　effects　of　annealing　temperature　on　microstructures　of　the　samples　were　examined.　Fine,　uniform　and　well-crystallized　thin　films　with　pure　perovskite　structure　were　obtained　through　annealing　at　750　degrees　C.　And　the　number　of　pores　reduce　with　denser　microstructure　by　increasing　the　Er3+　content.　Additionally,　ferroelectric　and　photoluminescence　(PL)　properties　of　xEr-BCTZ　thin　films　were　studied.　Owing　to　dense　microstructure　and　few　defects,　high　remanent　polarization　and　strongest　up-conversion　PL　intensity　were　obtained　at　x　=　0.01.　The　result　of　X-ray　photoelectron　spectroscopy　confirms　the　existence　of　oxygen-related　defects　in　the　films,　which　can　partly　deteriorate　the　ferroelectricity　and　PL　intensity.　This　work　can　guide　other　multifunctional　lead-free　ferroelectric-luminescent　thin　films　for　micro-optoelectronic　applications.