Designing　the　electronic　structures　of　the　van　der　Waals　(vdW)　heterostructures　to　obtain　high-efficiency　solar　cells　showed　a　fascinating　prospect.　In　this　work,　we　screened　the　potential　of　vdW　heterostructures　for　solar　cell　application　by　combining　the　group　III-VI　MXA　(M　=　Al,　Ga,　In　and　X-A　=　S,　Se,　Te)　and　elementary　group　VI　X-B　(X-B　=　Se,　Te)　monolayers　based　on　first-principle　calculations.　The　results　highlight　that　InSe/Te　vdW　heterostructure　presents　type-II　electronic　band　structure　feature　with　a　band　gap　of　0.88　eV,　where　tellurene　and　InSe　monolayer　are　as　absorber　and　window　layer,　respectively.　Interestingly,　tellurene　has　a　1.14　eV　direct　band　gap　to　produce　the　photoexcited　electron　easily.　Furthermore,　InSe/Te　vdW　heterostructure　shows　remarkably　light　absorption　capacities　and　distinguished　maximum　power　conversion　efficiency　(PCE)　up　to　13.39%.　Our　present　study　will　inspire　researchers　to　design　vdW　heterostructures　for　solar　cell　application　in　a　purposeful　way.