Molecular　dynamics　(MD)　was　used　to　build　a　simulation　model　for　skiving　single　crystal　silicon　(SCS)　with　different　tool　radius.　Through　the　analysis　of　phase　change,　instantaneous　atomic　position,　temperature,　Wigner-Seitz　defects,　stress　and　other　variables,　and　the　mechanical　state　distribution　of　SCS　during　processing　is　studied.　The　results　show　that　the　amorphous　phase　transition　process　occurs　in　the　process　of　skiving　SCS　with　different　tool　radii,　the　difference　is　that　amorphous　atoms　use　chips　during　sharp　corner　cutting.　The　form　is　removed,　and　the　amorphous　atoms　in　the　rounded　tool　are　further　compressed　directly　under　the　tool,　causing　subsurface　damage.　The　removal　mechanism　of　sharp　corner　cutter　chips　is　shear,　and　the　removal　mechanism　of　round　corner　cutter　chips　is　shear　and　extrusion.　And　as　the　radius　of　the　tool　increases,　the　number　of　compressed　atoms　below　the　tool　increases　directly,　resulting　in　a　decrease　in　the　quality　of　the　processed　surface.