The　ultraviolet　to　terahertz　band　forms　the　main　focus　of　optoelectronics　research,　while　light　detection　in　different　bands　generally　requires　the　use　of　different　materials　and　processing　methods.　However,　researchers　are　aiming　to　realize　multi-band　detection　simultaneously　in　the　same　device　in　certain　specific　application　scenarios　and　ultra-wideband　photoelectric　detectors　can　also　realize　multi-function　and　multi-system　integration.　Therefore,　the　research　and　development　work　on　ultra-wideband　photoelectric　detectors　has　important　practical　application　value.　Here,　we　produced　self-powered　suspended　Pd-reduced　graphene　oxide-Ti　(Pd-rGO-Ti)　photodetectors.　We　varied　the　properties　of　the　rGO　films　by　using　different　annealing　temperatures　and　achieved　p-doping　and　n-doping　of　the　films　by　evaporating　palladium　films　and　titanium　films,　respectively,　thus　enabling　preparation　of　photothermoelectric　(PTE)　photodetectors　based　on　rGO　films.　The　resulting　detectors　have　excellent　photoelectric　responses　over　a　wideband　illumination　wavelength　range　from　375　nm　to　118.8　mu　m　(2.52　THz).　At　the　same　time,　we　determined　the　best　experimental　conditions　and　device　structure　by　varying　the　channel　width,　the　laser　spot　irradiation　position　and　the　experimental　atmospheric　pressure.　The　maximum　responsivity　obtained　from　our　detectors　is　142.08　mV　W-1,　the　response　time　is　approximately　100-200　ms　and　the　devices　have　high　detection　sensitivity.　Based　on　this　work,　we　assumed　in　the　subsequent　experiments　that　detectors　with　higher　performance　can　be　obtained　by　reducing　the　channel　width　and　atmospheric　pressure.　With　advantages　that　include　simple　fabrication,　low　cost,　large-scale　production　potential　and　ultra-wideband　responses,　these　Pd-rGO-Ti　photodetectors　have　broad　application　prospects　in　high-performance　integrated　optoelectronics.