The　combination　of　narrow　band　gaps　and　notable　stabilities　against　photoelectrochemical　corrosion　brings　copper　vanadates　into　the　forefront　of　emerging　photoanodes.　Herein,　we　report　a　feasible　approach　to　fabricate　beta-Cu3V2O8　thin　film　with　a　porous　structure　directly　on　indium-doped　tin　oxide　(ITO)　substrate　for　photoelectrochemical　water　oxidation.　The　porous　beta-Cu3V2O8　photoanode　exhibits　a　photocurrent　density　of　220　mu　A　cm(-2)　at　1.55　V　vs　RHE　(reversible　hydrogen　electrode)　in　pH　9.2　borate　buffer　electrolyte　under　simulated　solar　irradiation.　The　present　work　could　provide　a　base　for　further　development　of　porous　beta-Cu3V2O8　as　a　solar　fuels　photoanode.