The　construction　of　heterojunction　is　an　effective　strategy　to　manipulate　the　dynamic　behaviors　of　photo-induced　charges.　It　is　essential　for　wide　band　gap　semiconductor　to　introduce　defects　reasonably　to　mediate　electronic　properties　and　charge　behaviors.　Herein,　through　an　in　situ　etching　growing　method　and　thermal　treatment,　dual　defective　ternary　photocatalyst　ZnS/ZnO-In2O3　with　porous　layered　structure　and　extensive　heterojunction　interfaces　has　been　prepared　for　visible　light　photocatalysis　of　water　splitting.　The　suitable　position　of　intermediate　energy　level　endows　the　ternary　photocatalyst　with　the　ability　of　electrons　directed　flow　between　the　different　components,　and　the　transfer　mode　follows　Z-scheme.　The　cascaded　dual　defects　on　ZnO　and　ZnS　synergistically　facilitate　the　efficient　separation　of　photo-generated　charges　through　the　intimate　interface,　and　further　enhance　visible　light　photocatalysis　performance.　This　work　is　expected　to　enlighten　the　rational　design　of　dual　defects　for　wide　bandgap　semiconductor.