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author:

Zheng, Chunbo (Zheng, Chunbo.) [1] | Zheng, Xin (Zheng, Xin.) [2] | Feng, Chen (Feng, Chen.) [3] | Ju, Songman (Ju, Songman.) [4] | Xu, Zhongwei (Xu, Zhongwei.) [5] | Ye, Yuliang (Ye, Yuliang.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Li, Fushan (Li, Fushan.) [8]

Indexed by:

EI

Abstract:

The performance of perovskite quantum dot light-emitting diodes (PeQLEDs) has been rapidly enhanced recently, but the devices are still stuck in the stage of using small-scale solution processes, such as spin-coating. In this work, we report the realization of high performance PeQLEDs by using inkjet printing technique. We demonstrate the preparation of a printable perovskite quantum dot ink by using a hybrid solvent consisting of high boiling solvent dodecane and low boiling solvent n-octane. A universal strategy for eliminating coffee rings during inkjet printing of perovskite inks is developed based on the modulation of ink formulation, and the stacking model of perovskite quantum dot in a pixel pit structure is proposed. The inkjet-printed PeLEDs exhibit a low turn-on voltage of 2.7 V, a brightness of 10992 cd/m2 at 6.6 V and a maximum current efficiency of 8.67 cd/A, which is by far the highest value reported for inkjet-printed PeLEDs. The results pave a way for future realization of high performance pixelated PeLED displays with inkjet printing technique. © 2021 Elsevier B.V.

Keyword:

Ink Ink jet printing Luminance Nanocrystals Organic light emitting diodes (OLED) Perovskite Semiconductor quantum dots Solvents

Community:

  • [ 1 ] [Zheng, Chunbo]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Zheng, Xin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Feng, Chen]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Ju, Songman]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Xu, Zhongwei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Ye, Yuliang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 7 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 8 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2021

Volume: 93

3 . 8 6 8

JCR@2021

2 . 7 0 0

JCR@2023

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 27

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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