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author:

He, Lihua (He, Lihua.) [1] | Li, Enlong (Li, Enlong.) [2] | Yu, Rengjian (Yu, Rengjian.) [3] | Chen, Huipeng (Chen, Huipeng.) [4] | Zhang, Guocheng (Zhang, Guocheng.) [5]

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Abstract:

The persistent photoconductivity of organic material PDVT-10 combined with the polarization field provided by ferroelectric material P(VDF-TrFE), was used to control the relaxation characteristics of the photosynaptic device by adjusting the polarization intensity of ferroelectric material. The basic functions such as short-term plasticity and paired pulse facilitation of synapses are simulated, and the multilevel dimmable optical synapses are further realized. Moreover, the relaxation phenomenon of continuous photoconductance effect is similar to the flow characteristics of Ca2+ in biological synapses, which can better simulate the synaptic behavior of biological synapses. This study provides a new idea for the development of adjustable photosynapses. © 2021, Science Press. All right reserved.

Keyword:

Ferroelectricity Ferroelectric materials Field effect transistors Polarization Thin film transistors

Community:

  • [ 1 ] [He, Lihua]National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350102, China
  • [ 2 ] [Li, Enlong]National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350102, China
  • [ 3 ] [Yu, Rengjian]National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350102, China
  • [ 4 ] [Chen, Huipeng]National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350102, China
  • [ 5 ] [Zhang, Guocheng]National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350102, China
  • [ 6 ] [Zhang, Guocheng]Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou; 350108, China

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Source :

Acta Photonica Sinica

ISSN: 1004-4213

Year: 2021

Issue: 9

Volume: 50

Page: 252-259

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JCR@2021

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JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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