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author:

Lan, Shuqiong (Lan, Shuqiong.) [1] | Zhong, Jianfeng (Zhong, Jianfeng.) [2] | Wang, Xiaoyan (Wang, Xiaoyan.) [3]

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EI

Abstract:

The morphology of the active layer is vital for the device performance of organic electronics. However, most research is primarily focused on the active layer prepared from the spin coating method, which is not suitable for large area manufacturing. The inkjet printing technique has been widely studied in the field of organic electronics due to its advantages of scalability, patternability, and affordability. Nevertheless, morphological changes in the active layer during inkjet printing have received little attention. Herein, for the first time, the influence of inkjet printing parameters on the bulk heterojunction morphology and device performance of organic photovoltaics (OPVs) was systematically studied. The crystal sizes decreased as the inkjet printing speed or substrate temperature increased, which was vital for bimolecular recombination and carrier transport. Moreover, the π-π stacking distance decreased as the inkjet printing speed increased, which is beneficial to charge transport, resulting in improved device performance. However, an uneven film was formed when the substrate temperature increased, degrading the device performance. It is demonstrated that the control of inkjet printing parameters can effectively improve the morphology of active layer, paving guides for high-efficiency large-area production of OPVs and other organic electronics. © 2021 IOP Publishing Ltd.

Keyword:

Carrier transport Electronics industry Heterojunctions Industrial research Ink jet printing Morphology Substrates

Community:

  • [ 1 ] [Lan, Shuqiong]Department of Physics, School of Science, Jimei University, Xiamen; 361021, China
  • [ 2 ] [Zhong, Jianfeng]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Wang, Xiaoyan]Department of Physics, School of Science, Jimei University, Xiamen; 361021, China

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Source :

Journal of Physics D: Applied Physics

ISSN: 0022-3727

Year: 2021

Issue: 46

Volume: 54

3 . 4 0 9

JCR@2021

3 . 1 0 0

JCR@2023

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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