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author:

Chen, Ming (Chen, Ming.) [1] | Xie, Liming (Xie, Liming.) [2] | Wei, Changting (Wei, Changting.) [3] | Yi, Yuan-Qiu-Qiang (Yi, Yuan-Qiu-Qiang.) [4] | Chen, Xiaolian (Chen, Xiaolian.) [5] | Yang, Jian (Yang, Jian.) [6] | Zhuang, Jinyong (Zhuang, Jinyong.) [7] | Li, Fushan (Li, Fushan.) [8] | Su, Wenming (Su, Wenming.) [9] | Cui, Zheng (Cui, Zheng.) [10]

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Abstract:

Poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt(4,4′-(N-(4-butylphenyl))] (TFB), one of the most popular and widely used hole-transport layer (HTL) materials, has been successfully applied in high performance spin-coated quantum dots-based light-emitting diodes (QLEDs) due to its suitable energy level and high mobility. However, there are still many challenging issues in inkjet-printed QLED devices when using TFB as HTL. TFB normally suffers from the interlayer mixing and erosion, and low surface energy against the good film formation. Here, a novel environment-friendly binary solvent system was established for formulating quantum dot (QD) inks, which is based on mixing halogen-free alkane solvents of decalin and n-tridecane. The optimum volume ratio for the mixture of decalin and n-tridecane was found to be 7:3, at which a stable ink jetting flow and coffee-ring free QD films could be formed. To research the influence of substrate surface on the formation of inkjet-printed QD films, TFB was annealed at different temperatures, and the optimum annealing temperature was found to enable high quality inkjet-printed QD film. Inkjet-printed red QLED was ultimately manufactured. A maximum 18.3% of external quantum efficiency (EQE) was achieved, reaching 93% of the spin-coated QLED, which is the best reported high efficiency inkjet-printed red QLEDs to date. In addition, the inkjet-printed QLED achieved similar T75 operational lifetime (27 h) as compared to the spin-coated reference QLED (28 h) at 2,000 cd·m−2. This work demonstrated that the novel orthogonal halogen-free alkane co-solvents can improve the interfacial contact and facilitate high-performance inkjet printing QLEDs with high EQE and stability. [Figure not available: see fulltext.] © 2021, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

Keyword:

Hole mobility Hydrocarbons Ink Mixing Nanocrystals Organic light emitting diodes (OLED) Organic solvents Paraffins Quantum chemistry Quantum efficiency Semiconductor quantum dots Spin coating Thin films

Community:

  • [ 1 ] [Chen, Ming]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 2 ] [Xie, Liming]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 3 ] [Wei, Changting]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 4 ] [Yi, Yuan-Qiu-Qiang]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 5 ] [Chen, Xiaolian]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 6 ] [Yang, Jian]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 7 ] [Zhuang, Jinyong]Guangdong Juhua Printed Display Technol Company Ltd., Guangzhou; 510700, China
  • [ 8 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 9 ] [Su, Wenming]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China
  • [ 10 ] [Cui, Zheng]Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China

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Source :

Nano Research

ISSN: 1998-0124

Year: 2021

Issue: 11

Volume: 14

Page: 4125-4131

1 0 . 2 6 9

JCR@2021

9 . 6 0 0

JCR@2023

ESI HC Threshold:87

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 50

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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