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author:

Sun, Cai (Sun, Cai.) [1] | Wang, Ming-Sheng (Wang, Ming-Sheng.) [2] | Guo, Guo-Cong (Guo, Guo-Cong.) [3]

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EI

Abstract:

Bistable-state dielectric properties without maintaining external stimuli after switching are highly desirable for nonvolatile memory devices; however, research on switchable dielectric materials was mostly limited to the stimulation-constant mode. This work reports a record-high dielectric permittivity gain through the bistable-state modulation mode in two photochromic semiconductors (PSCs), and reveals the general structure characteristic and intrinsic physical reasons for the increase of dielectric permittivity. This discovery will guide the design for switchable dielectric materials with dielectric permittivity gain in the future. © 2021 American Chemical Society.

Keyword:

Dielectric materials Nonvolatile storage Permittivity Photochromism

Community:

  • [ 1 ] [Sun, Cai]State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 2 ] [Wang, Ming-Sheng]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou; 350002, China
  • [ 3 ] [Guo, Guo-Cong]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou; 350002, China

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Source :

ACS Applied Electronic Materials

Year: 2021

Issue: 8

Volume: 3

Page: 3301-3305

4 . 4 9 4

JCR@2021

4 . 4 0 0

JCR@2023

ESI HC Threshold:142

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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