In　the　information　display　field,　micro-light-emitting　diodes　(micro-LEDs)　possess　high　potentials　and　they　are　expected　to　lead　the　direction　of　developing　the　next-generation　new　display　technologies.　Their　display　performances　are　superior　to　those　produced　by　the　currently　prevailing　liquid　crystal　and　organic　light-emitting　diode　based　technologies.　However,　the　micro-LED　pixels　and　their　driving　circuits　are　often　fabricated　on　different　wafers,　which　implies　that　the　so-called　mass　transfer　seems　to　be　inevitable,　thus　facing　an　obvious　bottleneck.　In　this　paper,　the　emerging　graphene　field　effect　transistors　are　used　as　the　driving　elements　and　integrated　onto　the　GaN　micro-LEDs,　which　is　because　the　pixels　and　drivers　are　prepared　directly　on　the　same　wafer,　the　technical　problem　of　mass　transfer　is　fundamentally　bypassed.　Furthermore,　in　traditional　lithographic　process,　the　ultraviolet　photoresist　directly　contacts　the　graphene,　which　introduces　severe　carrier　doping,　thereby　leading　to　deteriorated　graphene　transistor　properties.　This,　not　surprisingly,　further　translates　into　lower　performances　of　the　integrated　devices.　In　the　present　work,　proposed　is　a　technique　in　which　the　polymethyl　methacrylate　(PMMA)　thin　films　act　as　both　the　protection　layers　and　the　interlayers　when　optimizing　the　graphene　field　effect　transistor　processing.　The　PMMA　layers　are　sandwiched　between　the　graphene　and　the　ultraviolet　photoresist,　which　is　a　brand　new　device　fabrication　process.　First,　the　new　process　is　tested　in　discrete　graphene　field　effect　transistors.　Compared　with　those　devices　that　are　processed　without　the　PMMA　protection　thin　films,　the　graphene　devices　fabricated　with　the　new　technology　typically　show　their　Dirac　point　at　a　gate　voltage　(Vg)　deviation　from　Vg　=　0,　that　is,　22　V　lower　than　their　counterparts.　In　addition,　an　increase　in　the　carrier　mobility　of　32%　is　also　observed.　Finally,　after　applying　the　newly　developed　fabrication　process　to　the　pixel-and-driver　integrated　devices,　it　is　found　that　their　performances　are　improved　significantly.　With　this　new　technique,　the　ultraviolet　photoresist　no　longer　directly　contacts　the　sensitive　graphene　channel　because　of　the　PMMA　protection.　The　doping　effect　and　the　performance　dropping　are　dramatically　reduced.　The　technique　is　facile　and　cheap,　and　it　is　also　applicable　to　two-dimensional　materials　besides　graphene,　such　as　MoS2　and　h-BN.　It　is　hoped　that　it　is　of　some　value　for　device　engineers　working　in　this　field.　Copyright　©　2021　Acta　Physica　Sinica.　All　rights　reserved.