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author:

Wang, Fangfang (Wang, Fangfang.) [1] | Lin, Song (Lin, Song.) [2] | Lu, Xuesong (Lu, Xuesong.) [3] | Hong, Ruoyu (Hong, Ruoyu.) [4] | Liu, Huiyong (Liu, Huiyong.) [5]

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EI

Abstract:

To buffer the volume expansion of silicon during charge-discharge process, a 3D carbon-coated stable silicon/graphene/CNT (C@Si/GN/CNT/PDA-C) composite was prepared. Si nanoparticles (SiNPs) were first modified by hexadecyl trimethyl ammonium bromide (CTAB) to enhance their stability and dispersibility in water, then uniformly distributed in graphene/carbon nanotubes (GN/CNT) by electrostatic self-assembly, and ultimately encapsulated by carbonized poly-dopamine carbon layer (PDA-C) at high-temperature. PDA-C not only alleviates the volume expansion of Si and inhibits the direct contact of Si with electrolyte, but also acts as a bridge between the conductive GN/CNT and Si to maintain electrode integrity. As an anode material for lithium-ion batteries, the C@Si/GN/CNT/PDA-C exhibits a superior reversible capacity of 1946 mAh g − 1 after 100 cycles with the capacity retention of 68.9% at a current density of 0.1 A g − 1, and over 1306 mAh g − 1 after 100 cycles at 1 A g − 1. The excellent electrochemical performance of C@Si/GN/CNT/PDA-C is attributed to the stable hierarchical structure. © 2021

Keyword:

Amines Anodes Electric discharges Electrolytes Expansion Ions Lithium-ion batteries Neurophysiology Self assembly Silicon

Community:

  • [ 1 ] [Wang, Fangfang]College of Chemical Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Lin, Song]College of Chemical Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Lu, Xuesong]School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh; EH14 4AS, United Kingdom
  • [ 4 ] [Hong, Ruoyu]College of Chemical Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Liu, Huiyong]College of Chemical Engineering, Fuzhou University, Fuzhou; 350108, China

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Source :

Electrochimica Acta

ISSN: 0013-4686

Year: 2022

Volume: 404

6 . 6

JCR@2022

5 . 5 0 0

JCR@2023

ESI HC Threshold:74

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 52

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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